Sign In | Join Free | My uabig.com
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd logo
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
Active Member

7 Years
Home > Tip Power Transistors >

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

Product Categories
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Contact Now

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : B772M

VCBO : -40V

VCEO : -30V

Storage Temperature : -55-150℃

Power mosfet transistor : TO-251-3L Plastic-Encapsulate

Material : Silicon

Type : Triode Transistor

Contact Now

TO-251-3L Plastic-Encapsulate Transistors B772M TRANSISTOR (PNP)

FEATURES

Low Speed Switching

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 1.25 W
RӨJA Thermal Resistance, junction to Ambient 100 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃




ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6 V
Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA
Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA
Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA
DC current gain hFE VCE= -2V, IC= -1A 60 400
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V

Transition frequency

 fT

VCE= -5V, IC=-0.1A

f =10MHz

50

80

MHz


CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400


Typical Characteristics


TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon MaterialTO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon MaterialTO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon MaterialTO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.380 0.087 0.094
A1 0.000 0.100 0.000 0.004
B 0.800 1.400 0.031 0.055
b 0.710 0.810 0.028 0.032
c 0.460 0.560 0.018 0.022
c1 0.460 0.560 0.018 0.022
D 6.500 6.700 0.256 0.264
D1 5.130 5.460 0.202 0.215
E 6.000 6.200 0.236 0.244
e 2.286 TYP. 0.090 TYP.
e1 4.327 4.727 0.170 0.186
M 1.778REF. 0.070REF.
N 0.762REF. 0.018REF.
L 9.800 10.400 0.386 0.409
L1 2.9REF. 0.114REF.
L2 1.400 1.700 0.055 0.067
V 4.830 REF. 0.190 REF.
ĭ 1.100 1.300 0.043 0.0±1

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon MaterialTO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material






Product Tags:

tip series transistors

      

high power pnp transistor

      
Wholesale TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material from china suppliers

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Shenzhen Hua Xuan Yang Electronics Co.,Ltd
*Subject:
*Message:
Characters Remaining: (0/3000)
 
You May Like