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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 10G03S

Product name : Mosfet Power Transistor

Type : mosfet transistor

Junction temperature : 150℃

Application : Power switching application

Features : Lead free product is acquired

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10G03S 30V N+P-Channel Enhancement Mode MOSFET

Description

The 10G03S uses advanced trench

technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a

level shifted high side switch, and for a host of other

applications

General Features

N-Channel

VDS = 30V,ID =10A

RDS(ON) < 16m Ω@ VGS=10V

P-Channel

VDS = -30V,ID = -9A

RDS(ON) < 37mΩ@ VGS=-10V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

Package Marking and Ordering Information

10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

Absolute Maximum Ratings (TC=25℃unless otherwise noted)
10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
N-Channel Typical Characteristics
10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor
P-Channel Typical Characteristics
10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

Product Tags:

n channel mosfet transistor

      

high voltage transistor

      
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